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1/15 february 2005 stP20NM60-stP20NM60fp-stw20nm60 stb20nm60 - stb20nm60-1 n-channel 600v - 0.25 ? - 20a to-220/fp/d2/i2pak/to-247 mdmesh? mosfet table 1: general features typical r ds (on) = 0.25 ? high dv/dt and avalanche capabilities 100% avalanche tested low input capacitance and gate charge low gate input resistance description the mdmesh? is a new revolutionary mosfet technology that associates the multiple drain pro- cess with the company?s powermesh? horizon- tal layout. the resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. the adoption of the company?s proprietary strip tech- nique yields overall dynamic performance that is significantly better than that of similar competi- tion?s products. applications the mdmesh? family is very suitable for increas- ing power density of high voltage converters allow- ing system miniaturization and higher efficiencies. table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d stP20NM60 stP20NM60fp stb20nm60 stb20nm60-1 stw20nm60 600 v 600 v 600 v 600 v 600 v < 0.29 ? < 0.29 ? < 0.29 ? < 0.29 ? < 0.29 ? 20 a 20 a 20 a 20 a 20 a 1 2 3 1 2 3 1 3 1 2 3 to-220 to-220fp d2pak i2pak 1 2 3 to-247 sales type marking package packaging stP20NM60 P20NM60 to-220 tube stP20NM60fp p 20nm60fp to-220fp tube st b 20n m 60t4 b2 0 nm6 0 d 2 p ak t a p e & r eel stb20nm60-1 b20nm60 i 2 pak tube stw20nm60 w20nm60 to-247 tube rev.2 free datasheet http:///
stP20NM60 - stP20NM60fp - stb20nm60 - stw20nm60 - stb20nm60-1 2/15 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 20 a, di/dt 400 a/s, v dd v (br)/dss, t j t jmax (*) limited only by maximum temperature allowed table 4: thermal data table 5: avalanche characteristics electrical characteristics (t case =25 c unless otherwise specified) table 6: on/off symbol parameter value unit to-220/d2pak/ i2pak/to-247 to-220fp v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20 k ? ) 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 20 20 (*) a i d drain current (continuous) at t c = 100 c 12.6 12.6 (*) a i dm ( ) drain current (pulsed) 80 80 (*) a p tot total dissipation at t c = 25 c 192 45 w derating factor 1.2 0.36 w/ c dv/dt (1) peak diode recovery voltage slope 15 v/ns v iso insulation winthstand voltage (dc) -- 2500 v t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c to-220/d2pak/ i2pak/to-247 to-220fp unit rthj-case thermal resistance junction-case max 0.65 2.8 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max. value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 10 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 650 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 10 a 0.25 0.29 ? free datasheet http:///
3/15 stP20NM60 - stP20NM60fp - stb20nm60 - stw20nm60 - stb20nm60-1 electrical characteristics (continued) table 7: dynamic table 8: source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d = 10 a 11 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 1500 350 35 pf pf pf c oss eq. (3) equivalent output capacitance v gs = 0v, v ds = 0v to 400 v 215 pf t d(on) t r t d(off) t f t c turn-on delay time rise time turn-off delay time fall time cross-over time v dd = 200 v, i d = 10 a r g = 4.7 ? v gs = 10 v (resistive load see, figure 3) v dd = 480 v, i d = 20 a (see test circuit, figure 5) 25 20 6 11 21 ns ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v, i d = 20 a, v gs = 10v 39 10 20 54 nc nc nc r g gate input resistance f = 1 mhz gate dc bias = 0 test signal level = 20 mv open drain 1.6 ? symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 20 80 a a v sd (1) forward on voltage i sd = 20 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =20 a, di/dt = 100 a/s v dd = 100 v, t j = 25 c (see test circuit, figure 5) 390 5 25 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =20 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see test circuit, figure 5) 510 6.5 26 ns c a free datasheet http:///
stP20NM60 - stP20NM60fp - stb20nm60 - stw20nm60 - stb20nm60-1 4/15 figure 3: safe operating area for to-220/ d2pak/i2pak figure 4: safe operating area for to-220fp figure 5: safe operating area for to-247 figure 6: thermal impedance for to-220/ d2pak/i2pak figure 7: thermal impedance for to-220fp figure 8: thermal impedance for to-247 free datasheet http:///
5/15 stP20NM60 - stP20NM60fp - stb20nm60 - stw20nm60 - stb20nm60-1 figure 9: output characteristics figure 10: transconductance figure 11: transfer characteristics figure 12: gate charge vs gate-source voltage figure 13: normalized gate threshold voltage vs temp. figure 14: static drain-source on resistance free datasheet http:///
stP20NM60 - stP20NM60fp - stb20nm60 - stw20nm60 - stb20nm60-1 6/15 figure 15: capacitance variations figure 16: normalized on resistance vs tem- perature figure 17: source-drain diode forward char- acteristics free datasheet http:///
7/15 stP20NM60 - stP20NM60fp - stb20nm60 - stw20nm60 - stb20nm60-1 figure 18: unclamped inductive load test cir- cuit figure 19: switching times test circuit for resistive load figure 20: test circuit for inductive load switching and diode recovery times figure 21: unclamped inductive wafeform figure 22: gate charge test circuit free datasheet http:///
stP20NM60 - stP20NM60fp - stb20nm60 - stw20nm60 - stb20nm60-1 8/15 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data free datasheet http:///
9/15 stP20NM60 - stP20NM60fp - stb20nm60 - stw20nm60 - stb20nm60-1 l2 a b d e h g l6 f l3 g 1 123 f 2 f 1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data free datasheet http:///
stP20NM60 - stP20NM60fp - stb20nm60 - stw20nm60 - stb20nm60-1 10/15 dim. mm. inch min. typ max. min. typ. max. a 4.32 4.57 0.178 0.180 a1 0.00 0.25 0.00 0.009 b 0.71 0.91 0.028 0.350 b2 1.15 1.40 0.045 0.055 c 0.46 0.61 0.018 0.024 c2 1.22 1.40 0.048 0.055 d 8.89 9.02 9.40 0.350 0.355 0.370 d1 8.01 0.315 e 10.04 10.28 0.395 0.404 e 2.54 0.010 h 13.10 13.70 0.515 0.540 l 1.30 1.70 0.051 0.067 l1 1.15 1.39 0.045 0.054 l2 1.27 1.77 0.050 0.069 l4 2.70 3.10 0.106 0.122 v2 0 8 0 8 to-263 (d 2 pak) mechanical data free datasheet http:///
11/15 stP20NM60 - stP20NM60fp - stb20nm60 - stw20nm60 - stb20nm60-1 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 a1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 d 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0.393 0.410 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l2 1.27 1.40 0.050 0.055 to-262 (i 2 pak) mechanical data free datasheet http:///
stP20NM60 - stP20NM60fp - stb20nm60 - stw20nm60 - stb20nm60-1 12/15 tape and reel shipment (suffix ? t4 ? )* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data free datasheet http:///
13/15 stP20NM60 - stP20NM60fp - stb20nm60 - stw20nm60 - stb20nm60-1 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ? p 3.55 3.65 0.140 0.143 ? r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data free datasheet http:///
stP20NM60 - stP20NM60fp - stb20nm60 - stw20nm60 - stb20nm60-1 14/15 table 9: revision history date revision description of changes 26-jul-2004 1 first release 17-feb-2005 2 insert the to-247 package free datasheet http:///
15/15 stP20NM60 - stP20NM60fp - stb20nm60 - stw20nm60 - stb20nm60-1 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america free datasheet http:///

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